MOSFET N-CH 100V 4.2A DIRECTFET
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta), 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 62mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 4.8V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 530 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET™ SH |
Package / Case: | DirectFET™ Isometric SH |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF5803D2PBFIR (Infineon Technologies) |
MOSFET P-CH 40V 3.4A 8SO |
|
2SJ377(TE16R1,NQ)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 5A PW-MOLD |
|
IRFBC30ASTRLVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
SI4880DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 13A 8-SOIC |
|
IRFBF20Vishay / Siliconix |
MOSFET N-CH 900V 1.7A TO220AB |
|
IRF3704ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 67A TO220AB |
|
IRFZ48RVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
GA100JT12-227GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |
|
IRLR3715ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 49A DPAK |
|
SI7388DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
|
NVMFS6B03NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
|
IXFK150N15PWickmann / Littelfuse |
MOSFET N-CH 150V 150A TO264AA |
|
IRF3805L-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 160A D2PAK |