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IRF6655TR1

IRF6655TR1

MOSFET N-CH 100V 4.2A DIRECTFET

IRF6655TR1

IRF6655TR1

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Part No :

IRF6655TR1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 4.2A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
372037 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
PDF
IRF6655TR1 PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.8V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:11.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SH
Package / Case:DirectFET™ Isometric SH
IRF6655TR1 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6655TR1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6655TR1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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