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GA100JT12-227

GA100JT12-227

Image is for reference, please contact us to get the real picture

Part No :

GA100JT12-227

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 160A SOT227
Catalog
Transistors - FETs, MOSFETs - Single
Availability
452045 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
PDF
GA100JT12-227 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10mOhm @ 100A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:14400 pF @ 800 V
FET Feature:-
Power Dissipation (Max):535W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
GA100JT12-227 is available at GangBo-ic.com, Please review product page below for detailed information, including GA100JT12-227 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GA100JT12-227 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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