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IRF5803D2PBF

IRF5803D2PBF

MOSFET P-CH 40V 3.4A 8SO

IRF5803D2PBF

IRF5803D2PBF

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Part No :

IRF5803D2PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 40V 3.4A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
382038 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IRF5803D2PBF PDF
Type Description
Series:FETKY™
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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