MOSFET N-CH 20V 4.7A TSM
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Rds On (Max) @ Id, Vgs: | 31mOhm @ 4A, 4V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1020 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSM |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPB100N03S2L-03 GIR (Infineon Technologies) |
MOSFET N-CH 30V 100A TO263-3 |
|
SPP80N04S2-H4IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
SPP04N60C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 4.5A TO220-3 |
|
IRFB4510GPBFIR (Infineon Technologies) |
MOSFET N CH 100V 62A TO-220AB |
|
AON6780Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 30A/85A 8DFN |
|
RDN100N20ROHM Semiconductor |
MOSFET N-CH 200V 10A TO220FN |
|
FQD13N06LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A DPAK |
|
AOT11C60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 600V 11A TO220 |
|
FQI9N08LTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.3A I2PAK |
|
SIS612EDNT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A PPAK1212-8S |
|
FDMA905P_F130Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 10A 6MICROFET |
|
BUK7107-40ATC,118Nexperia |
MOSFET N-CH 40V 75A SOT426 |
|
IRF7524D1PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 1.7A MICRO8 |