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SPP04N60C3HKSA1

SPP04N60C3HKSA1

MOSFET N-CH 650V 4.5A TO220-3

SPP04N60C3HKSA1

SPP04N60C3HKSA1

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Part No :

SPP04N60C3HKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 4.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
221822 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
SPP04N60C3HKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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