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SIS612EDNT-T1-GE3

SIS612EDNT-T1-GE3

MOSFET N-CH 20V 50A PPAK1212-8S

SIS612EDNT-T1-GE3

SIS612EDNT-T1-GE3

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Part No :

SIS612EDNT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 50A PPAK1212-8S
Catalog
Transistors - FETs, MOSFETs - Single
Availability
291829 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
SIS612EDNT-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2060 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Package / Case:PowerPAK® 1212-8S
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