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IRF3707ZS

IRF3707ZS

MOSFET N-CH 30V 59A D2PAK

IRF3707ZS

IRF3707ZS

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Part No :

IRF3707ZS

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 59A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
151815 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
IRF3707ZS PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1210 pF @ 15 V
FET Feature:-
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3707ZS is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3707ZS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3707ZS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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