MOSFET N-CH 200V 3A/18A TO251A
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 105mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2065 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 100W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251A |
Package / Case: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSP171PE6327TIR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
NTD23N03RSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 3.8A/17.1A DPAK |
|
ZVP1320FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 35MA SOT23-3 |
|
NTMFS4701NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.7A 5DFN |
|
BSC130P03LSGAUMA1Rochester Electronics |
PFET, 12A I(D), 30V, 0.013OHM, 1 |
|
IPI100P03P3L-04IR (Infineon Technologies) |
MOSFET P-CH 30V 100A TO262-3 |
|
IRLL2703IR (Infineon Technologies) |
MOSFET N-CH 30V 3.9A SOT223 |
|
IRL3715ZLIR (Infineon Technologies) |
MOSFET N-CH 20V 50A TO262 |
|
IRFR3910TRLIR (Infineon Technologies) |
MOSFET N-CH 100V 16A DPAK |
|
SI3475DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 950MA 6TSOP |
|
IXFE23N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 21A SOT227B |
|
STH52N10LF3-2AGSTMicroelectronics |
MOSFET N-CH 100V 52A H2PAK-2 |
|
EPC2018EPC |
GANFET N-CH 150V 12A DIE |