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SI3475DV-T1-E3

SI3475DV-T1-E3

MOSFET P-CH 200V 950MA 6TSOP

AM51614A73N-A

AM51614A73N-A

SWITCH SNAP ACTION SPDT 16A 125V

SI3475DV-T1-E3

SI3475DV-T1-E3

Image is for reference, please contact us to get the real picture

Part No :

SI3475DV-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 200V 950MA 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
311331 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI3475DV-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.61Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 3.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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