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BSC130P03LSGAUMA1

BSC130P03LSGAUMA1

PFET, 12A I(D), 30V, 0.013OHM, 1

BSC130P03LSGAUMA1

BSC130P03LSGAUMA1

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Part No :

BSC130P03LSGAUMA1

Manufacturer
Rochester Electronics
Description
PFET, 12A I(D), 30V, 0.013OHM, 1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
261326 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
BSC130P03LSGAUMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:73.1 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3.67 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-3
Package / Case:8-PowerVDFN
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