TVS DIODE 30.8V 49.9V DO214AB
RES SMD 25.5KOHM 0.1% 1/10W 0603
MOSFET N-CH 1000V 4A TO247
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.2Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1150 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 195W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPP100N06S2-05IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
NTB25P06GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
IRF510SVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
AOI2210Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 200V 3A/18A TO251A |
|
BSP171PE6327TIR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
NTD23N03RSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 3.8A/17.1A DPAK |
|
ZVP1320FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 35MA SOT23-3 |
|
NTMFS4701NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.7A 5DFN |
|
BSC130P03LSGAUMA1Rochester Electronics |
PFET, 12A I(D), 30V, 0.013OHM, 1 |
|
IPI100P03P3L-04IR (Infineon Technologies) |
MOSFET P-CH 30V 100A TO262-3 |
|
IRLL2703IR (Infineon Technologies) |
MOSFET N-CH 30V 3.9A SOT223 |
|
IRL3715ZLIR (Infineon Technologies) |
MOSFET N-CH 20V 50A TO262 |
|
IRFR3910TRLIR (Infineon Technologies) |
MOSFET N-CH 100V 16A DPAK |