MOSFET N-CH 20V 75A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 2410 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 88W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AO4447AL_104Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 18.5A 8SOIC |
|
IRF7821TRPBF-1IR (Infineon Technologies) |
MOSFET N-CH 30V 13.6A 8SO |
|
IRF7701IR (Infineon Technologies) |
MOSFET P-CH 12V 10A 8TSSOP |
|
IPB100N04S2L03ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A TO263-3 |
|
IRL2910LIR (Infineon Technologies) |
MOSFET N-CH 100V 55A TO262 |
|
IRFR3303CPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 33A DPAK |
|
FA57SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 57A SOT-227 |
|
AOK5N100LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO247 |
|
SPP100N06S2-05IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
NTB25P06GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
IRF510SVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
AOI2210Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 200V 3A/18A TO251A |
|
BSP171PE6327TIR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |