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IPI80N04S3H4AKSA1

IPI80N04S3H4AKSA1

MOSFET N-CH 40V 80A TO262-3

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INSULATION DISPLACEMENT TERMINAL

IPI80N04S3H4AKSA1

IPI80N04S3H4AKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPI80N04S3H4AKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 80A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
881188 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 08 - Nov 12 2025
PDF
IPI80N04S3H4AKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 65µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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