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IXTY1R4N60P

IXTY1R4N60P

MOSFET N-CH 600V 1.4A TO252

IXTY1R4N60P

IXTY1R4N60P

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Part No :

IXTY1R4N60P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 600V 1.4A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
981198 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
IXTY1R4N60P PDF
Type Description
Series:PolarHV™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1R4N60P is available at GangBo-ic.com, Please review product page below for detailed information, including IXTY1R4N60P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTY1R4N60P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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