MOSFET N-CH 600V 4A ITO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5Ohm @ 1.3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 654 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ITO-220AB |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFK52N60Q2Wickmann / Littelfuse |
MOSFET N-CH 600V 52A TO264AA |
|
STB21NK50ZSTMicroelectronics |
MOSFET N-CH 500V 17A D2PAK |
|
IXTY1R4N60PWickmann / Littelfuse |
MOSFET N-CH 600V 1.4A TO252 |
|
IRFZ46NLIR (Infineon Technologies) |
MOSFET N-CH 55V 53A TO262 |
|
FQB9N08LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.3A D2PAK |
|
IRF7484QIR (Infineon Technologies) |
MOSFET N-CH 40V 14A 8SO |
|
AO4444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 11A 8SOIC |
|
NDB7050LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 75A D2PAK |
|
FDU8770_F071Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A IPAK |
|
DMG8880LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11.6A 8SOP |
|
IPI25N06S3-25IR (Infineon Technologies) |
MOSFET N-CH 55V 25A TO262-3 |
|
BSC014N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 34A/100A TDSON |
|
SIB417AEDK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 9A PPAK SC75-6 |