MOSFET N-CH 30V 20.3A 8SO
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 20.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.9mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.6 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1380 pF @ 12 V |
FET Feature: | - |
Power Dissipation (Max): | 6.25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIS778DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8 |
|
FDD107AN06LA0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.4A/10.9A TO252 |
|
IRF7807VD1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
64-0007IR (Infineon Technologies) |
MOSFET N-CH 200V 18A TO220AB |
|
IRFUC20Vishay / Siliconix |
MOSFET N-CH 600V 2A TO251AA |
|
IPI057N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 80A TO262-3 |
|
TPC8035-H(TE12L,QMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 18A 8SOP |
|
AO3401AL_101Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4.3A SOT23-3 |
|
STP20NM65NSTMicroelectronics |
MOSFET N-CH 650V 15A TO220 |
|
STB5N52K3STMicroelectronics |
MOSFET N-CH 525V 4.4A D2PAK |
|
AO4476ALAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A 8SOIC |
|
2N7002E-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 240MA SOT23-3 |
|
RJK0654DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 30A LFPAK |