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SIS778DN-T1-GE3

SIS778DN-T1-GE3

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Part No :

SIS778DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 35A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
521152 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
SIS778DN-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1390 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):52W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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