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FDD107AN06LA0

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MOSFET N-CH 60V 3.4A/10.9A TO252

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FDD107AN06LA0

FDD107AN06LA0

Image is for reference, please contact us to get the real picture

Part No :

FDD107AN06LA0

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 3.4A/10.9A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
531153 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
FDD107AN06LA0 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta), 10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:91mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 25 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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