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IPSH4N03LA G

IPSH4N03LA G

Image is for reference, please contact us to get the real picture

Part No :

IPSH4N03LA G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 90A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
670467 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPSH4N03LA G PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 15 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
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