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IRF3709S

IRF3709S

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Part No :

IRF3709S

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 90A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
720472 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IRF3709S PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3709S is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3709S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3709S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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