RES SMD 576K OHM 1% 1/4W 1206
MOSFET N-CH 600V 20A TO263
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 250mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 74 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3440 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 463W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D²Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
PH1930AL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
![]() |
IXTA44N25TWickmann / Littelfuse |
MOSFET N-CH 250V 44A TO263 |
![]() |
TK12A60U(Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 12A TO220SIS |
![]() |
IRF3711IR (Infineon Technologies) |
MOSFET N-CH 20V 110A TO220AB |
![]() |
IRFZ48LVishay / Siliconix |
MOSFET N-CH 60V 50A TO262-3 |
![]() |
IRF3711ZCSTRRIR (Infineon Technologies) |
MOSFET N-CH 20V 92A D2PAK |
![]() |
IRFR12N25DTRRPIR (Infineon Technologies) |
MOSFET N-CH 250V 14A DPAK |
![]() |
STB40N20STMicroelectronics |
MOSFET N-CH 200V 40A D2PAK |
![]() |
IRFP264NPBFVishay / Siliconix |
MOSFET N-CH 250V 44A TO247-3 |
![]() |
IRFU4105IR (Infineon Technologies) |
MOSFET N-CH 55V 27A IPAK |
![]() |
STD4NK50Z-1STMicroelectronics |
MOSFET N-CH 500V 3A IPAK |
![]() |
BSS138TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 200MA SOT23-3 |
![]() |
PMPB100ENEAXNexperia |
PMPB100ENEA/SOT1220/SOT1220 |