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SPI10N10L

SPI10N10L

MOSFET N-CH 100V 10.3A TO262-3

SPI10N10L

SPI10N10L

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Part No :

SPI10N10L

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 10.3A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
750175 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SPI10N10L PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id:2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:444 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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