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BSP149 E6327

BSP149 E6327

MOSFET N-CH 200V 660MA SOT223-4

BSP149 E6327

BSP149 E6327

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Part No :

BSP149 E6327

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 660MA SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
870187 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
BSP149 E6327 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id:1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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