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IRF6643TR1PBF

IRF6643TR1PBF

MOSFET N-CH 150V 6.2A DIRECTFET

IRF6643TR1PBF

IRF6643TR1PBF

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Part No :

IRF6643TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 6.2A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
840184 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IRF6643TR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:34.5mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2340 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MZ
Package / Case:DirectFET™ Isometric MZ
IRF6643TR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6643TR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6643TR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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