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IXTA1N200P3HVTRL

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MOSFET N-CH 2000V 1A TO263HV

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IXTA1N200P3HVTRL

IXTA1N200P3HVTRL

Image is for reference, please contact us to get the real picture

Part No :

IXTA1N200P3HVTRL

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 2000V 1A TO263HV
Catalog
Transistors - FETs, MOSFETs - Single
Availability
890089 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 10 - May 14 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):2000 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263HV
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA1N200P3HVTRL is available at GangBo-ic.com, Please review product page below for detailed information, including IXTA1N200P3HVTRL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTA1N200P3HVTRL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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  • IXTA1N200P3HVTRL Price
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