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IRF9Z24NS

IRF9Z24NS

MOSFET P-CH 55V 12A D2PAK

IRF9Z24NS

IRF9Z24NS

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Part No :

IRF9Z24NS

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 55V 12A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
010101 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2024
PDF
IRF9Z24NS PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z24NS is available at GangBo-ic.com, Please review product page below for detailed information, including IRF9Z24NS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF9Z24NS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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