MOSFET N-CH 30V 12A PPAK SO-8
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 1.9W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON7446Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 3.3A/8A 8DFN |
|
FQU3N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A IPAK |
|
APTC90DAM60T1GMicrosemi |
MOSFET N-CH 900V 59A SP1 |
|
IRFR210BTM_FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 2.7A DPAK |
|
DMN3031LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9A 8SOP |
|
EPC2015EPC |
GANFET N-CH 40V 33A DIE OUTLINE |
|
IPB25N06S3-25IR (Infineon Technologies) |
MOSFET N-CH 55V 25A TO263-3 |
|
NTGS3455T1Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.5A 6TSOP |
|
MGSF1N02LT1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT23-3 |
|
IPD105N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 35A TO252-3 |
|
SI1013X-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 350MA SC89-3 |
|
IRL3303STRRIR (Infineon Technologies) |
MOSFET N-CH 30V 38A D2PAK |
|
BUK755R4-100E,127Nexperia |
MOSFET N-CH 100V 120A TO220AB |