MOSFET N-CH 75V 160A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.8mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 260 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7580 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK (7-Lead) |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APT20M22B2VRGMicrosemi |
MOSFET N-CH 200V 100A T-MAX |
|
BSL802SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
IXFH9N80Wickmann / Littelfuse |
MOSFET N-CH 800V 9A TO247AD |
|
APT5012JNMicrosemi |
MOSFET N-CH 500V 43A ISOTOP |
|
SI3495DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.3A 6TSOP |
|
IRL3714LIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO262 |
|
FQP630TSTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A TO220-3 |
|
IRFR024Vishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IPI80N06S4L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO262-3 |
|
SSM5H12TU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 1.9A UFV |
|
RJK4514DPK-00#T0Renesas Electronics America |
MOSFET N-CH 450V 22A TO3P |
|
NVB5426NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
|
FQB70N10TM_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A D2PAK |