MOSFET P-CH 20V 5.3A 6TSOP
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 24mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: | 750mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 4.5 V |
Vgs (Max): | ±5V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRL3714LIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO262 |
|
FQP630TSTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A TO220-3 |
|
IRFR024Vishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IPI80N06S4L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO262-3 |
|
SSM5H12TU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 1.9A UFV |
|
RJK4514DPK-00#T0Renesas Electronics America |
MOSFET N-CH 450V 22A TO3P |
|
NVB5426NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
|
FQB70N10TM_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A D2PAK |
|
SI7452DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 11.5A PPAK SO-8 |
|
IRLR3410TRLIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
HUFA76443P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220-3 |
|
AOD240_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 23A/70A TO252 |
|
FDI3652Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A/61A I2PAK |