MOSFET N-CH 30V 1.9A UFV
Type | Description |
---|---|
Series: | U-MOSIII |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Rds On (Max) @ Id, Vgs: | 133mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.9 nC @ 4 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 123 pF @ 15 V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | UFV |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RJK4514DPK-00#T0Renesas Electronics America |
MOSFET N-CH 450V 22A TO3P |
|
NVB5426NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
|
FQB70N10TM_AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A D2PAK |
|
SI7452DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 11.5A PPAK SO-8 |
|
IRLR3410TRLIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
HUFA76443P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220-3 |
|
AOD240_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 23A/70A TO252 |
|
FDI3652Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A/61A I2PAK |
|
AO4772Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 6A 8SOIC |
|
IRLMS4502TRIR (Infineon Technologies) |
MOSFET P-CH 12V 5.5A MICRO6 |
|
SPP07N60S5IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-3 |
|
IRFZ46NSPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 53A D2PAK |
|
2SK2231(TE16R1,NQ)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 5A PW-MOLD |