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FCP190N65S3R0

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FCP190N65S3R0

FCP190N65S3R0

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Part No :

FCP190N65S3R0

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 17A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
623662 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
PDF
FCP190N65S3R0 PDF
Type Description
Series:SuperFET® III
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 400 V
FET Feature:-
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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