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IPZA60R180P7XKSA1

IPZA60R180P7XKSA1

MOSFET N-CH 600V 18A TO247-4

IPZA60R180P7XKSA1

IPZA60R180P7XKSA1

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Part No :

IPZA60R180P7XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 18A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10894 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
IPZA60R180P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.081 pF @ 400 V
FET Feature:-
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-4
Package / Case:TO-247-4
IPZA60R180P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPZA60R180P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPZA60R180P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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