6.5A, 150V, 0.8OHM, P-CHANNEL PO
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTD6416ANL-1GRochester Electronics |
MOSFET N-CH 100V 19A IPAK |
|
STP80NF55-08STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
SUM70040M-GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO263-7 |
|
IRFS7434TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
MCH3474-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 4A SC70FL/MCPH3 |
|
IPU80R2K8CEAKMA1Rochester Electronics |
MOSFET N-CH 800V 1.9A TO251-3 |
|
IPB100N04S204ATMA4Rochester Electronics |
MOSFET N-CH 40V 100A TO263-3-2 |
|
SUM110N04-03P-E3Vishay / Siliconix |
MOSFET N-CH 40V 110A TO263 |
|
IRFS7430TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
DMP3008SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.6A PWRDI3333-8 |
|
SSM6J213FE(TE85L,FToshiba Electronic Devices and Storage Corporation |
MOSFET P CH 20V 2.6A ES6 |
|
STP10NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
|
IRFI4228PBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |