MOSFET N-CH 30V 9A PPAK1212-8
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® 1212-8 |
Package / Case: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHB21N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 17.4A D2PAK |
|
IPB180N03S4L-01Rochester Electronics |
IPB180N03 - 20V-40V N-CHANNEL AU |
|
RQ3E180BNTBROHM Semiconductor |
MOSFET N-CHANNEL 30V 39A 8HSMT |
|
NVMFS5C604NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 40A/287A 5DFN |
|
FDMS86368-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |
|
EKI10126Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 66A TO220-3 |
|
DMT10H015LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 7.3A PWRDI5060 |
|
FDS7064N7Rochester Electronics |
MOSFET N-CH 30V 16.5A 8SO |
|
IPI120N06S402AKSA2Rochester Electronics |
MOSFET N-CH 60V 120A TO262-3-1 |
|
SQM120P10_10M1LGE3Vishay / Siliconix |
MOSFET P-CH 100V 120A TO263 |
|
NTMFS5C450NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/110A 5DFN |
|
MGSF1N02LT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NVMFS4841NWFT1GRochester Electronics |
MOSFET N-CH 30V 16A 5DFN |