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MGSF1N02LT1G

MGSF1N02LT1G

SMALL SIGNAL FIELD-EFFECT TRANSI

MGSF1N02LT1G

MGSF1N02LT1G

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Part No :

MGSF1N02LT1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Catalog
Transistors - FETs, MOSFETs - Single
Availability
25405 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 22 - Dec 26 2024
PDF
MGSF1N02LT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 5 V
FET Feature:-
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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