MOSFET N-CH 100V 7.3A PWRDI5060
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Ta), 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 16mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1871 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 1.3W (Ta), 46W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI5060-8 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDS7064N7Rochester Electronics |
MOSFET N-CH 30V 16.5A 8SO |
|
IPI120N06S402AKSA2Rochester Electronics |
MOSFET N-CH 60V 120A TO262-3-1 |
|
SQM120P10_10M1LGE3Vishay / Siliconix |
MOSFET P-CH 100V 120A TO263 |
|
NTMFS5C450NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/110A 5DFN |
|
MGSF1N02LT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NVMFS4841NWFT1GRochester Electronics |
MOSFET N-CH 30V 16A 5DFN |
|
TPH3212PSTransphorm |
GANFET N-CH 650V 27A TO220AB |
|
2SK3635-Z-E1-AZRochester Electronics |
MOSFET N-CH 200V 8A TO252 |
|
FQD3N60TFRochester Electronics |
MOSFET N-CH 600V 2.4A DPAK |
|
FQH18N50V2Rochester Electronics |
MOSFET N-CH 500V 20A TO247-3 |
|
FDP060AN08A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 16A/80A TO220-3 |
|
DMT4004LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 26A PWRDI5060 |
|
TSM042N03CS RLGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 30A 8SOP |