MOSFET N-CH 40V 100A TO220AB
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 97 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5708 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 203W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRFR5305TRLIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
STB11NK50ZT4STMicroelectronics |
MOSFET N-CH 500V 10A D2PAK |
|
R6030KNXC7ROHM Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
|
BSM600C12P3G201ROHM Semiconductor |
SICFET N-CH 1200V 600A MODULE |
|
SPA20N60C3Rochester Electronics |
MOSFET N-CH 600V 20.7A TO220-111 |
|
AUIRFP1405-203Rochester Electronics |
AUIRFP1405 - 55V-60V N-CHANNEL A |
|
IPD90N04S403ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-3 |
|
SIA431DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
BSC024NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 25A/100A TDSON |
|
SD213DE TO-72 4LLinear Integrated Systems, Inc. |
HIGH SPEED N-CHANNEL LATERAL DMO |
|
PHP45NQ10T,127Nexperia |
MOSFET N-CH 100V 47A TO220AB |
|
TPN4R806PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 72A 8TSON |
|
FQD4N25TMRochester Electronics |
MOSFET N-CH 250V 3A DPAK |