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STH360N4F6-2

STH360N4F6-2

MOSFET N-CH 40V 180A H2PAK-2

STH360N4F6-2

STH360N4F6-2

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Part No :

STH360N4F6-2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 40V 180A H2PAK-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
483148 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
STH360N4F6-2 PDF
Type Description
Series:DeepGATE™, STripFET™ VI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.25mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:340 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:17930 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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