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R6009JNJGTL

R6009JNJGTL

MOSFET N-CH 600V 9A LPTS

R6009JNJGTL

R6009JNJGTL

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Part No :

R6009JNJGTL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 9A LPTS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11100 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:585mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id:7V @ 1.38mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 15 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 100 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LPTS
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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