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FCP190N65S3

FCP190N65S3

POWER MOSFET, N-CHANNEL, SUPERFE

FCP190N65S3

FCP190N65S3

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Part No :

FCP190N65S3

Manufacturer
Rochester Electronics
Description
POWER MOSFET, N-CHANNEL, SUPERFE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FCP190N65S3 PDF
Type Description
Series:SuperFET® III
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.35 pF @ 400 V
FET Feature:-
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FCP190N65S3 is available at GangBo-ic.com, Please review product page below for detailed information, including FCP190N65S3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCP190N65S3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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