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SSM6J216FE,LF

SSM6J216FE,LF

MOSFET P-CHANNEL 12V 4.8A ES6

SSM6J216FE,LF

SSM6J216FE,LF

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Part No :

SSM6J216FE,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CHANNEL 12V 4.8A ES6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16852 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
SSM6J216FE,LF PDF
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:32mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1040 pF @ 12 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:ES6
Package / Case:SOT-563, SOT-666
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