MOSFET N-CH 100V 56.6A TO220
Type | Description |
---|---|
Series: | ThunderFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 56.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.1mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 81 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3300 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 39W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 Full Pack |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIR846DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
IRF830BPBFVishay / Siliconix |
MOSFET N-CH 500V 5.3A TO220AB |
|
IRFZ44PBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
NVTFS5824NLTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FQPF13N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A TO220F |
|
FDB86363-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 110A D2PAK |
|
VN0106N3-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
|
RQ5A025ZPTLROHM Semiconductor |
MOSFET P-CH 12V 2.5A TSMT3 |
|
AUIRF2903ZRochester Electronics |
MOSFET N-CH 30V 160A TO220AB |
|
TK2A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2A TO220SIS |
|
AOT9N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 9A TO220 |
|
BSZ0901NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 25A/40A TSDSON |
|
NTE66NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 14A TO220 |