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IRLZ24NSPBF

IRLZ24NSPBF

MOSFET N-CH 55V 18A D2PAK

IRLZ24NSPBF

IRLZ24NSPBF

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Part No :

IRLZ24NSPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 18A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
713071 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
IRLZ24NSPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLZ24NSPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLZ24NSPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLZ24NSPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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