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2SJ661-1E

2SJ661-1E

MOSFET P-CH 60V 38A TO262-3

2SJ661-1E

2SJ661-1E

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Part No :

2SJ661-1E

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 38A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14650 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
2SJ661-1E PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4360 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.65W (Ta), 65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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