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IRFW640BTM

IRFW640BTM

N-CHANNEL POWER MOSFET

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IRFW640BTM

IRFW640BTM

Image is for reference, please contact us to get the real picture

Part No :

IRFW640BTM

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14321 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IRFW640BTM is available at GangBo-ic.com, Please review product page below for detailed information, including IRFW640BTM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFW640BTM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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  • Credits can be used on the second and subsequent orders.
  • The credits are valid for two years from the date your last purchase.
  • IRFW640BTM Price
  • IRFW640BTM Series
  • IRFW640BTM Datasheet
  • IRFW640BTM Application
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  • IRFW640BTM Features
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