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SIR410DP-T1-GE3

SIR410DP-T1-GE3

MOSFET N-CH 20V 35A PPAK SO-8

SIR410DP-T1-GE3

SIR410DP-T1-GE3

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Part No :

SIR410DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 35A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14909 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
SIR410DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 10 V
FET Feature:-
Power Dissipation (Max):4.2W (Ta), 36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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