MOSFET N-CH 40V 95A TDSON-8-10
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 3.3mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 98 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3174 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 4.3W (Ta), 94W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8-10 |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FCH165N60ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 23A TO247-3 |
|
NTLJF3117PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.3A 6WDFN |
|
IPW60R125P6Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
STD5N20LT4STMicroelectronics |
MOSFET N-CH 200V 5A DPAK |
|
STP22N60DM6STMicroelectronics |
MOSFET N-CH 600V 15A TO220 |
|
BUK653R2-55C,127Rochester Electronics |
PFET, 120A I(D), 55V, 0.0048OHM, |
|
SFT1345-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 11A TP-FA |
|
2SK1315L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRF3205IR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
2SJ661-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A TO262-3 |
|
BUK663R5-30C,118Rochester Electronics |
MOSFET N-CH 30V 100A D2PAK |
|
SI3437DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 1.4A 6TSOP |
|
SIHG47N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AC |