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NTLJF3117PT1G

NTLJF3117PT1G

MOSFET P-CH 20V 2.3A 6WDFN

NTLJF3117PT1G

NTLJF3117PT1G

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Part No :

NTLJF3117PT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 2.3A 6WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
322832 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
NTLJF3117PT1G PDF
Type Description
Series:µCool™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:531 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):710mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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