English
简体中文
MOSFET N-CH 900V 6A I2PAK
FORGE, ASSY PIN, 0/0-6/4-0/8-2/1
CONN IC DIP SOCKET 42POS GOLD
POWER CABLE 3M
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | MDmesh™ K5 |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 900 V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.1Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 110W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I2PAK |
| Package / Case: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
STP7NK80ZFPSTMicroelectronics |
MOSFET N-CH 800V 5.2A TO220FP |
|
IPB60R199CPAATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A D2PAK |
|
FCP104N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 37A TO220-3 |
|
NTD4969N-35GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A IPAK |
|
TJ15S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 15A DPAK |
|
PH3830L,115Rochester Electronics |
MOSFET N-CH 30V 98A LFPAK56 |
|
MMBF2202PT1GRochester Electronics |
MOSFET P-CH 20V 300MA SC70-3 |
|
TP2535N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 350V 86MA TO92-3 |
|
IXFH60N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 60A TO247AD |
|
APT8052BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 15A TO247 |
|
IPA80R1K4CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 800V 3.9A TO220 |
|
FCU900N60ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A IPAK |
|
NTMSD6N303R2Rochester Electronics |
MOSFET N-CH 30V 6A 8SOIC |