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IPB60R199CPAATMA1

IPB60R199CPAATMA1

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Part No :

IPB60R199CPAATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 16A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
692569 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
IPB60R199CPAATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 100 V
FET Feature:-
Power Dissipation (Max):139W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R199CPAATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB60R199CPAATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB60R199CPAATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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